features z low current (max. 50ma) z high voltage (max. 300v). z video output stages. marking dc maximum ratings ( t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 300 v v ceo collector-emitter voltage 300 v v ebo emitter-base voltage 5 v i c collector current -continuous 50 ma p c collector power dissipation 500 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 300 v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 300 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 5 v collector cut-off current i cbo v cb =200v, i e =0 10 na emitter cut-off current i ebo v eb =5v, i c =0 50 na dc current gain h fe v ce =20v, i c =25ma 50 collector-emitter saturation voltage v ce(sat) i c =30ma, i b =5ma 0.6 v transition frequency f t v ce =10v, i c =10ma, f=100mhz 60 mhz sot-89 1. base 2. collector 3. emitter 1 2 3 BF620 transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
BF620 2 date:2011/05 www.htsemi.com semiconductor jinyu typical characteristics
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